AFM OBSERVATION OF SELF-ASSEMBLED MONOLAYER FILMS ON GAAS(110)

被引：38

作者：

OHNO, H ^{[1
]}

MOTOMATSU, M ^{[1
]}

MIZUTANI, W ^{[1
]}

TOKUMOTO, H ^{[1
]}

机构：

[1] NATL INST ADV INTERDISCIPLINARY RES,JOINT RES CTR ATOM TECHNOL,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

SELF-ASSEMBLED MONOLAYER; N-OCTADECANETHIOL (ODT); GAAS (110) SURFACE; DEPRESSION; ATOMIC-SCALE ORGANIC STRUCTURE; OXIDATION; X-RAY PHOTOELECTRON SPECTROSCOPY; ATOMIC FORCE MICROSCOPE;

D O I：

10.1143/JJAP.34.1381

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have confirmed that a self-assembled monolayer (SAM) film of octadecanethiol (ODT), CH3(CH2)(17)SH, can be formed on a cleaved GaAs (110) surface, by using an atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS). Circular depressions were observed on the surface after film formation. The area of the circular depressions increased with immersion time, indicating that the solution oxidized the interface between ODT molecules and the GaAs surface, resulting in removal of ODT molecules. The oxidation was considerably faster in pure ethanol solution than that in ODT solution, demonstrating that the SAM film protects the GaAs surface from-oxidation. High-resolution lateral force microscope (LFM) images revealed a periodic structure that had two types of lines: periodic lines 0.57 nm apart and lines rotated 55 degrees with respect to them. A structural model of the SAM successfully explained both the features in high-resolution LFM images and the depression depth observed in AFM images.

引用

页码：1381 / 1386

页数：6

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