GAAS INTERFACES WITH OCTADECYL THIOL SELF-ASSEMBLED MONOLAYER - STRUCTURAL AND ELECTRICAL-PROPERTIES

被引：87

作者：

NAKAGAWA, OS ^{[1
]}

ASHOK, S ^{[1
]}

SHEEN, CW ^{[1
]}

MARTENSSON, J ^{[1
]}

ALLARA, DL ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT MAT SCI & ENGN,UNIV PK,PA 16802

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

SURFACE PASSIVATION; SELF-ASSEMBLED MONOLAYER; NANO-SCALE ORGANIC STRUCTURE; SCHOTTKY DIODES; GAAS (100) SURFACE;

D O I：

10.1143/JJAP.30.3759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A passivation layer on chemically etched (100) GaAs surface was synthesized with octadecyl thiol, CH3(CH2)17SH, and its structural and electrical properties were investigated. The layer is a self-assembled monolayer (SAM) in all-transplanar-zig-zag conformation and is the first conformationally ordered SAM on any semiconductor surface. The barrier height of GaAs Schottky diodes can be modified by the octadecyl thiol SAM passivation without sacrificing good diode characteristics. Octadecyl and other alkane thiol SAM's enable introduction of a nano-scale, controlled structure on a GaAs surface and prove useful in an assessing the GaAs surface electrical properties.

引用

页码：3759 / 3762

页数：4

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