Hydrogen control of ferromagnetism in a dilute magnetic semiconductor

被引：70

作者：

Goennenwein, STB

Wassner, TA

Huebl, H

Brandt, MS

Philipp, JB

Opel, M

Gross, R

Koeder, A

Schoch, W

Waag, A

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] Bayer Akad Wissensch, Walther Meissner Inst, D-85748 Garching, Germany

[3] Univ Ulm, Abt Halbleiterphys, D-89069 Ulm, Germany

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.92.227202

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that upon exposure to a remote dc hydrogen plasma, the magnetic and electronic properties of the dilute magnetic semiconductor Ga1-xMnxAs change qualitatively. While the as-grown Ga1-xMnxAs thin films are ferromagnetic at temperatures Tless than or similar to70 K, the samples are found to be paramagnetic after the hydrogenation, with a Brillouin-type magnetization curve even at T=2 K. Comparing magnetization and electronic transport measurements, we conclude that the density of free holes p is significantly reduced by the plasma process, while the density of Mn magnetic moments does not change.

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页码：227202 / 1

页数：4

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