InGaAs/GaAs/alkanethiolate radial superlattices

被引：26

作者：

Deneke, Ch. ^{[1
]}

Zschieschang, U. ^{[1
]}

Klauk, H. ^{[1
]}

Schmidt, O. G. ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 26期

关键词：

D O I：

10.1063/1.2424541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A radial InGaAs/GaAs/1-hexadecanethiol superlattice is fabricated by the roll-up of a strained InGaAs/GaAs bilayer passivated with a molecular self-assembled monolayer. The technique allows the formation of multiperiod inorganic/organic hybrid heterostructures. The authors investigate the radial superlattices in a detailed transmission electron microscopy study. The structure consists of 11 tightly bonded semiconductor/organic layers with thicknesses and chemical compositions accurately controlled by epitaxial growth and self-assembly. Their chemical analysis reveals that neither any detectable oxygen contamination nor amorphization is present at the superlattice interfaces. (c) 2006 American Institute of Physics.

引用

页数：3

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