Doping of GaN with Fe and Mg for spintronics applications

被引：19

作者：

Bonanni, Alberta

Simbrunner, Clemens

Wegscheider, Matthias

Przybylinska, Hanka

Wolos, Agnieszka

Sitter, Helmut

Jantsch, Wolfgang

机构：

[1] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2006年 / 243卷 / 07期

关键词：

D O I：

10.1002/pssb.200565230

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Metal-organic chemical vapour deposition of GaN: Fe and (Ga, Fe)N:Mg has been carried out in order to optimize the growth process and to investigate the effectiveness of Fe ions and Mg acceptors incorporation. All samples have been investigated via high-resolution X-ray diffraction, secondary-ion mass spectroscopy, electron paramagnetic resonance (EPR) and magnetization measurements. Co-doping of Fe and delta-Mg has been found to promote the acceptors incorporation and EPR data, supported by superconducting quantum interference device magnetometry experiments, reveal the presence of Fe ions in two charge states, namely the Fe3+ responsible,for Curie paramagnetism and the Fe2+ tentatively correlated to van Vleck paramagnetism. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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页码：1701 / 1705

页数：5

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