Virtual interface approximation model applied to spectroscopic ellipsometry for on-line composition determination of metalorganic chemical vapor deposition grown ternary nitrides

被引：8

作者：

Bonanni, A ^{[1
]}

Schmidegg, K

Montaigne-Ramil, A

Sitter, H

Hingerl, K

Stifter, D

机构：

[1] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria

[2] Christian Doppler Lab Surface Opt, A-4040 Linz, Austria

[3] Upper Austrian Res GmbH, A-4020 Linz, Austria

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 04期

关键词：

D O I：

10.1116/1.1585078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In situ spectroscopic ellipsometry measurements in the ultraviolet-visible spectral range were performed during metalorganic chemical vapor deposition of GaN and AlGaN layers on sapphire. At first. the initial GaN-sapphire interface formation has been characterized and the optical response of the nitride layers for temperatures up to 1200 degreesC has been recorded. The data were used as the basis for evaluating kinetic ellipsometry measurements performed during growth: an algorithm, based on the virtual interface approximation model, has been developed and implemented to determine the layer composition of AlGaN multilayer structures in real time. (C) 2003 American Vacuum Society.

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收藏

页码：1825 / 1827

页数：3

相关论文

共 21 条

[1] NEW DEVELOPMENTS IN SPECTROELLIPSOMETRY - THE CHALLENGE OF SURFACES [J].

ASPNES, DE .

THIN SOLID FILMS, 1993, 233 (1-2) :1-8

[2] GROWTH OF ALXGA1-XAS PARABOLIC QUANTUM-WELLS BY REAL-TIME FEEDBACK-CONTROL OF COMPOSITION [J].

ASPNES, DE ;

QUINN, WE ;

TAMARGO, MC ;

PUDENZI, MAA ;

SCHWARZ, SA ;

BRASIL, MJSP ;

NAHORY, RE ;

GREGORY, S .

APPLIED PHYSICS LETTERS, 1992, 60 (10) :1244-1246

[3] Optical approaches to determine near-surface compositions during epitaxy [J].

Aspnes, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03) :960-966

[4] MINIMAL-DATA APPROACHES FOR DETERMINING OUTER-LAYER DIELECTRIC RESPONSES OF FILMS FROM KINETIC REFLECTOMETRIC AND ELLIPSOMETRIC MEASUREMENTS [J].

ASPNES, DE .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1993, 10 (05) :974-983

[5] In situ optical monitoring of AlGaN thickness and composition during MOVPE growth of AlGaN/GaN microwave HFETs [J].

Balmer, RS ;

Pickering, C ;

Kier, AM ;

Birbeck, JCH ;

Saker, M ;

Martin, T .

JOURNAL OF CRYSTAL GROWTH, 2001, 230 (3-4) :361-367

[6] High quality GaN grown by MOVPE [J].

Beaumont, B ;

Vaille, M ;

Boufaden, T ;

elJani, B ;

Gibart, P .

JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) :316-320

[7] In situ spectroscopic ellipsometry of MOCVD-grown GaN compounds for on-line composition determination and growth control [J].

Bonanni, A ;

Stifter, D ;

Montaigne-Ramil, A ;

Schmidegg, K ;

Hingerl, K ;

Sitter, H .

JOURNAL OF CRYSTAL GROWTH, 2003, 248 :211-215

[8] In situ spectroscopic ellipsometry as a sensor for hard coatings and steel nitriding [J].

Bonanni, A ;

Stifter, D ;

Hingerl, K ;

Störi, H ;

Werner, WSM ;

Brenner, J ;

Weithaler, C ;

Gruska, B ;

Prunel, G ;

Delaire, V ;

Sanvito, T .

SURFACE AND INTERFACE ANALYSIS, 2002, 34 (01) :681-685

[9] Lasing mechanism of InGaN/GaN/AlGaN multiquantum well laser diode [J].

Domen, K ;

Kuramata, A ;

Tanahashi, T .

APPLIED PHYSICS LETTERS, 1998, 72 (11) :1359-1361

[10]

Ebert M, 2001, PHYS STATUS SOLIDI A, V184, P79, DOI 10.1002/1521-396X(200103)184:1<79::AID-PSSA79>3.0.CO