NEW DEVELOPMENTS IN SPECTROELLIPSOMETRY - THE CHALLENGE OF SURFACES

被引：45

作者：

ASPNES, DE

机构：

[1] Department of Physics, North Carolina State University, Raleigh

来源：

THIN SOLID FILMS | 1993年 / 233卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90050-Y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Advances in technology, especially semiconductor technology, are providing new opportunities for the development and application of spectroellipsometry and related techniques, particularly for real-time diagnostics and control Two recent examples of surface and near-surface analysis illustrate possibilities. reflectance-difference spectroscopy of (001) GaAs growth surfaces under ultra-high vacuum and atmospheric-pressure conditions has provided the first evidence of dimer formation during organometallic chemical vapor chemical deposition (OMCVD). Kinetic-ellipsommetric determination of the composition x of AlxGa1-xAs alloys during chemical beam epitaxy (CBE), with x established by a history-independent, minimal-data approach, has been used to realize the first fully automatic closed-loop feedback system for controlling growth directly. Possible future directions are discussed.

引用

收藏

页码：1 / 8

页数：8

相关论文

共 109 条

[1] SURFACE PHASE-TRANSITIONS ON CLEAN GE(111) STUDIED BY SPECTROSCOPIC ELLIPSOMETRY [J].

ABRAHAM, M ;

LELAY, G ;

HILA, J .

PHYSICAL REVIEW B, 1990, 41 (14) :9828-9835

[2] INSITU INVESTIGATION OF THE LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF LATTICE-MISMATCHED SEMICONDUCTORS USING REFLECTANCE ANISOTROPY MEASUREMENTS [J].

ACHER, O ;

KOCH, SM ;

OMNES, F ;

DEFOUR, M ;

RAZEGHI, M ;

DREVILLON, B .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) :3564-3577

[3] INSITU DETERMINATION OF DIELECTRIC FUNCTIONS AND OPTICAL GAP OF ULTRATHIN AMORPHOUS-SILICON BY REAL-TIME SPECTROSCOPIC ELLIPSOMETRY [J].

AN, I ;

LI, YM ;

WRONSKI, CR ;

NGUYEN, HV ;

COLLINS, RW .

APPLIED PHYSICS LETTERS, 1991, 59 (20) :2543-2545

[4] SPECTROSCOPIC ELLIPSOMETRY ON THE MILLISECOND TIME SCALE FOR REAL-TIME INVESTIGATIONS OF THIN-FILM AND SURFACE PHENOMENA [J].

AN, I ;

LI, YM ;

NGUYEN, HV ;

COLLINS, RW .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (08) :3842-3848

[5] GA ADSORPTION ON SI(111) ANALYZED BY RHEED AND INSITU ELLIPSOMETRY [J].

ANDRIEU, S ;

DAVITAYA, FA .

JOURNAL OF CRYSTAL GROWTH, 1991, 112 (01) :146-152

[6]

ANNAPRAGADA AV, 1991, P MATER RES SOC, V222, P81

[7] APPLICATION OF ELLIPSOMETRY TO CRYSTAL-GROWTH BY ORGANOMETALLIC MOLECULAR-BEAM EPITAXY [J].

ASPNES, DE ;

QUINN, WE ;

GREGORY, S .

APPLIED PHYSICS LETTERS, 1990, 56 (25) :2569-2571

[8] DIRECT OPTICAL MEASUREMENT OF SURFACE DIELECTRIC RESPONSES - INTERRUPTED GROWTH ON (001) GAAS [J].

ASPNES, DE ;

CHANG, YC ;

STUDNA, AA ;

FLOREZ, LT ;

FARRELL, HH ;

HARBISON, JP .

PHYSICAL REVIEW LETTERS, 1990, 64 (02) :192-195

[9] OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001) [J].

ASPNES, DE ;

HARBISON, JP ;

STUDNA, AA ;

FLOREZ, LT .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1687-1690

[10] OPTICAL CONTROL OF GROWTH OF ALXGA1-XAS BY ORGANOMETALLIC MOLECULAR-BEAM EPITAXY [J].

ASPNES, DE ;

QUINN, WE ;

GREGORY, S .

APPLIED PHYSICS LETTERS, 1990, 57 (25) :2707-2709

← 1 2 3 4 5 6 7 8 9 10 →