Lasing mechanism of InGaN/GaN/AlGaN multiquantum well laser diode

被引：38

作者：

Domen, K ^{[1
]}

Kuramata, A ^{[1
]}

Tanahashi, T ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 11期

关键词：

D O I：

10.1063/1.121436

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the lasing mechanism of an InGaN/GaN/AlGaN multiquantum well (MQW) laser diode on SiC grown by low-pressure metalorganic vapor phase epitaxy. Surface emission and edge emission are compared by optical pumping on the laser chip for which electrical pumping was made. Excitation power dependence of photoluminescence (PL) and PL mapping are also taken on the same chip. From the results, we demonstrate that lasing phenomena in our laser an dominated by free carriers and that the observed various stimulated emission lines are caused by the inhomogeneity of the InGaN MQW. (C) 1998 American Institute of Physics.

引用

页码：1359 / 1361

页数：3

共 13 条

[1] Shortest wavelength semiconductor laser diode [J].

Akasaki, I ;

Sota, S ;

Sakai, H ;

Tanaka, T ;

Koike, M ;

Amano, H .

ELECTRONICS LETTERS, 1996, 32 (12) :1105-1106

[2]

[Anonymous], 1992, Institute of Physics Conference Series, Bristol and Philadelphia, PA, USA

[3]

BULLMAN GE, 1997, DEV RES C

[4] Luminescences from localized states in InGaN epilayers [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1997, 70 (21) :2822-2824

[5] Gain analysis for surface emission by optical pumping of wurtzite GaN [J].

Domen, K ;

Kondo, K ;

Kuramata, A ;

Tanahashi, T .

APPLIED PHYSICS LETTERS, 1996, 69 (01) :94-96

[6]

Im JS, 1996, MRS INTERNET J N S R, V1, pU293

[7] Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates [J].

Itaya, K ;

Onomura, M ;

Nishio, J ;

Sugiura, L ;

Saito, S ;

Suzuki, M ;

Rennie, J ;

Nunoue, SY ;

Yamamoto, M ;

Fujimoto, H ;

Kokubun, Y ;

Ohba, Y ;

Hatakoshi, G ;

Ishikawa, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (10B) :L1315-L1317

[8] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J].

LASHER, G ;

STERN, F .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A) :A553-&

[9] Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1997, 70 (20) :2753-2755

[10] InGaN-based multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B) :L74-L76

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