Growth mechanism and photoluminescence of CdS nanobelts on Si substrate

被引：46

作者：

Liu, WF ^{[1
]}

Jia, C ^{[1
]}

Jin, CG ^{[1
]}

Yao, LZ ^{[1
]}

Cai, WL ^{[1
]}

Li, XG ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Mat Sci & Technol, Hefei 230026, Anhui, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 269卷 / 2-4期

基金：

中国国家自然科学基金;

关键词：

growth models; single crystal growth; physical vapor deposition processes; nanomaterials; semiconducting materials;

D O I：

10.1016/j.jcrysgro.2004.05.093

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Large-scale US nanobelts were synthesized using a simple physical evaporation of US particles under controlled conditions on an Si substrate without any catalyst. The synthesized nanobelts are single crystals with a hexagonal structure growing along the [0 0 1] direction and the growth process follows a vapor-solid mechanism. Two emission bands around 517 and 735 nm of the nanobelts are observed, and the X-ray photoelectron spectroscopy (XPS) results reveal that the band at 735 nm originates from the V-s(+) vacancies. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：304 / 309

页数：6

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