Dynamic characteristics of high-speed In0.4Ga0.6As/GaAs self-organized quantum dot lasers at room temperature

被引：91

作者：

Ghosh, S ^{[1
]}

Pradhan, S ^{[1
]}

Bhattacharya, P ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 16期

关键词：

D O I：

10.1063/1.1514823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the room-temperature modulation characteristics of self-organized In0.4Ga0.6As/GaAs quantum dot lasers in which electrons are injected into the dot lasing states by tunneling. A small-signal modulation bandwidth of f(-3 dB)=22 GHz is measured. Values of differential gain at 288 K of dg/dncongruent to8.85x10(-14) cm(2) and gain compression factor epsilon=7.2x10(-16) cm(3) are derived from the modulation data. Extremely low values of linewidth enhancement factor alphasimilar to1 and chirp <0.6 Angstrom were also measured in the devices. (C) 2002 American Institute of Physics.

引用

页码：3055 / 3057

页数：3

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