A steady-state approach to determine diffusion coefficients: The migration of silicon on the Si(100) surface

被引：15

作者：

Aldao, CM ^{[1
]}

Iguain, JL ^{[1
]}

Martin, HO ^{[1
]}

机构：

[1] NATL UNIV LA PLATA,DEPT PHYS,SCH EXACT & NAT SCI,RA-7600 MAR DEL PLATA,BUENOS AIRES,ARGENTINA

来源：

SURFACE SCIENCE | 1996年 / 366卷 / 03期

关键词：

atomistic dynamics; silicon; surface diffusion;

D O I：

10.1016/0039-6028(96)00828-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We introduce a steady-state method to analytically determine diffusion coefficients for a particle in a strip with multiple inequivalent adsorption sites in the unit cell. This approach is applied to a variety of models showing its simplicity and usefulness. In particular, the diffusion coefficient of a Si adatom on the Si(100) for a model based on the Stillinger-Weber potential is computed. Comparisons with stochastic kinetic simulations are presented.

引用

页码：483 / 490

页数：8

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