Metal Schottky diodes on Zn-polar and O-polar bulk ZnO

被引：137

作者：

Allen, M. W. ^{[1
]}

Alkaisi, M. M.

Durbin, S. M.

机构：

[1] Univ Canterbury, Dept Elect & Comp Engn, Christchurch 8020, New Zealand

[2] Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechol, Christchurch 8020, New Zealand

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 10期

关键词：

D O I：

10.1063/1.2346137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Planar Pd, Pt, Au, and Ag Schottky diodes with low ideality factors were fabricated on the Zn-polar (0001) and O-polar (000 < over bar > 1 < over bar >) faces of bulk, single crystal ZnO wafers. The diodes were characterized by current-voltage and capacitance-voltage measurements. A polarity effect was observed for Pt and Pd diodes with higher quality barriers achieved on the O-polar face. No significant polarity effect was observed for Au or Ag diodes. The highest barriers were achieved with Ag as the Schottky metal with barrier heights varying between 0.77 and 1.02 eV. This is possibly due to varying degrees of oxidation of the Ag contacts. (c) 2006 American Institute of Physics.

引用

页数：3

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