Influence of annealing on physical properties of evaporated SnS films

被引:98
作者
Devika, M. [1 ]
Reddy, N. Koteeswara
Ramesh, K.
Gunasekhar, K. R.
Gopal, E. S. R.
Reddy, K. T. Ramakrishna
机构
[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India
[2] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
[3] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India
关键词
D O I
10.1088/0268-1242/21/8/025
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of annealing on the composition, crystal structure, surface features and electro-optical properties of tin mono-sulfide ( SnS) films, deposited by thermal evaporation at 300 degrees C, has been studied. Elemental analysis of the films shows sulfur deficiency, which increases at higher annealing temperatures ( T-a). The SnS structure in the as-deposited and annealed films remains orthorhombic. With an increase in T-a, the grain size and the surface roughness are reduced. The electrical resistivity also decreases with increasing T-a. The variation of activation energy and optical parameters with T-a has been explained by taking into account the degree of preferred orientation of the grains. The films annealed at 100 degrees C show some unusual features compared to those annealed at other temperatures.
引用
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页码:1125 / 1131
页数:7
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