Electrochemical deposition of SnS thin films

被引：152

作者：

Ichimura, M ^{[1
]}

Takeuchi, K

Ono, Y

Arai, E

机构：

[1] Nagoya Inst Technol, Ctr Cooperat Res, Nagoya, Aichi 4668555, Japan

[2] Nagoya Inst Technol, Dept Elect & Comp Engn, Nagoya, Aichi 4668555, Japan

来源：

THIN SOLID FILMS | 2000年 / 361卷

关键词：

SnS; electrochemical deposition; aqueous bath; solar cell;

D O I：

10.1016/S0040-6090(99)00798-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SnS has a bandgap around 1.0-1.3 eV and the p-type conductivity, and therefore is suitable for the absorption layer in solar cells. In this study, Sn was deposited onto In2O3-coated glass substrates by electrochemical deposition from aqueous solutions and characterized chemically, structurally, and optically. The deposition bath contained SnSO4 and Na2S2O3. The deposited SnS was polycrystalline and of orthorhombic structure, and its composition was slightly Sn-rich. The direct bandgap was estimated to be 1.3 eV from optical transmission spectra. The relationship between the Blm properties and the deposition parameters was investigated to optimize the deposition condition. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：98 / 101

页数：4

共 8 条

[1] LOW-TEMPERATURE CHEMICAL PRECIPITATION AND VAPOR-DEPOSITION OF SNXS THIN-FILMS [J].