Growth of polycrystalline SnS films by spray pyrolysis

被引:165
作者
Reddy, NK [1 ]
Reddy, KTR [1 ]
机构
[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India
关键词
tin monosulfide thin films; spray pyrolysis; physical properties;
D O I
10.1016/S0040-6090(98)00431-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of tin monosulfide (SnS) have been prepared by spray pyrolysis on Coming 7059 glass substrates with the substrate temperatures in the range 300-350 degrees C; keeping the other deposition parameters constant. The films were characterised to evaluate the composition, structure, electrical resistivity and optical energy gap. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:4 / 6
页数:3
相关论文
共 9 条
[1]  
[Anonymous], PHOTOCONDUCTIVITY SO
[2]  
Dittrich H., 1996, CRYST RES TECHNOL, V31, P833
[3]   LOW-TEMPERATURE CHEMICAL PRECIPITATION AND VAPOR-DEPOSITION OF SNXS THIN-FILMS [J].
ENGELKEN, RD ;
MCCLOUD, HE ;
LEE, C ;
SLAYTON, M ;
GHOREISHI, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (11) :2696-2707
[4]   ELECTRODEPOSITION AND CHARACTERIZATION OF SNS THIN-FILMS [J].
MISHRA, K ;
RAJESHWAR, K ;
WEISS, A ;
MURLEY, M ;
ENGELKEN, RD ;
SLAYTON, M ;
MCCLOUD, HE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (07) :1915-1923
[5]   CHARACTERIZATION OF VACUUM-EVAPORATED TIN SULFIDE FILM FOR SOLAR-CELL MATERIALS [J].
NOGUCHI, H ;
SETIYADI, A ;
TANAMURA, H ;
NAGATOMO, T ;
OMOTO, O .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1994, 35 (1-4) :325-331
[6]   INFLUENCE OF TEMPERATURE AND PRESSURE ON THE ELECTRONIC-TRANSITIONS IN SNS AND SNSE SEMICONDUCTORS [J].
PARENTEAU, M ;
CARLONE, C .
PHYSICAL REVIEW B, 1990, 41 (08) :5227-5234
[7]  
PU WG, 1994, 1 WORLD C PHOT EN CO, P365
[8]   CHEMICAL-DEPOSITION OF TIN(II) SULFIDE THIN-FILMS [J].
RISTOV, M ;
SINADINOVSKI, G ;
GROZDANOV, I ;
MITRESKI, M .
THIN SOLID FILMS, 1989, 173 (01) :53-58
[9]   PHOTOELECTROCHEMICAL BEHAVIOR OF TIN MONOSULFIDE [J].
SHARON, M ;
BASAVASWARAN, K .
SOLAR CELLS, 1988, 25 (02) :97-107