CNx-layers prepared by plasma assisted chemical vapour deposition

被引:12
作者
Gruger, H
Selbmann, D
Wolf, E
Leonhardt, A
Arnold, B
机构
[1] Inst. Festkorper W., 01171 Dresden
关键词
Cn(x)-thin films; beta-c(3)N(4); plasma activated cvd;
D O I
10.1016/S0257-8972(96)03048-4
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
CNx-layers were prepared by plasma assisted chemical vapour deposition methods (PACVD) with capacitively or inductively coupled plasma using different carbon precursors (CO, C2H2, CH4, C-2(CN)(4), fullerene). The composition, structure and chemical bonds depend highly on precursor and deposition conditions. The layers were predominantly amorphous. With CO as precursor the N/C ratio in the layers was close to that of C3N4. Small crystallites have been found in some layers by transmission electron microscopy, the electron microdiffraction patterns fitted to those predicted for the beta-C3N4 and for a rhombohedral C3N4 phase. First experiments with fullerenes as carbon precursor resulted in layers with a N/C ratio up to 0.9. The carbon was mainly sp(3) hybridized. With hydrogen containing precursors NC ratios up to 0.9 have been measured at temperatures below 600 K. The hydrogen content was high. Higher temperatures led to harder layers and lower nitrogen contents. Using tetracyanoethylene soft layers were obtained with a N/C ratio up to 0.7 and a high content of cyanogroups.
引用
收藏
页码:409 / 414
页数:6
相关论文
共 14 条
[1]   ANALYTICAL TRANSMISSION ELECTRON-MICROSCOPY IN MATERIALS RESEARCH [J].
BAUER, HD ;
THOMAS, J ;
WETZIG, K .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1995, 150 (01) :141-152
[2]   FORMATION OF CARBON NITRIDE FILMS ON SI(100) SUBSTRATES BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED VAPOR-DEPOSITION [J].
BOUSETTA, A ;
LU, M ;
BENSAOULA, A ;
SCHULTZ, A .
APPLIED PHYSICS LETTERS, 1994, 65 (06) :696-698
[3]   FORMATION OF CARBON NITRIDE FILMS BY MEANS OF ION ASSISTED DYNAMIC MIXING (IVD) METHOD [J].
FUJIMOTO, F ;
OGATA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (3B) :L420-L423
[4]  
HOFMANN V, IN PRESS FRESENIUS J, V355
[5]   ELECTRICAL AND ELECTRON-SPIN-RESONANCE MEASUREMENTS OF AMORPHOUS HYDROGENATED CARBON NITRIDE [J].
LIN, S ;
NOONAN, K ;
FELDMAN, BJ ;
DONG, M ;
JONES, MT .
SOLID STATE COMMUNICATIONS, 1991, 80 (02) :101-102
[6]   STABILITY OF CARBON NITRIDE SOLIDS [J].
LIU, AY ;
WENTZCOVITCH, RM .
PHYSICAL REVIEW B, 1994, 50 (14) :10362-10365
[7]   PREDICTION OF NEW LOW COMPRESSIBILITY SOLIDS [J].
LIU, AY ;
COHEN, ML .
SCIENCE, 1989, 245 (4920) :841-842
[8]   CARBON NITRIDE DEPOSITED USING ENERGETIC SPECIES - A 2-PHASE SYSTEM [J].
MARTON, D ;
BOYD, KJ ;
ALBAYATI, AH ;
TODOROV, SS ;
RABALAIS, JW .
PHYSICAL REVIEW LETTERS, 1994, 73 (01) :118-121
[9]   EXPERIMENTAL REALIZATION OF THE COVALENT SOLID CARBON NITRIDE [J].
NIU, CM ;
LU, YZ ;
LIEBER, CM .
SCIENCE, 1993, 261 (5119) :334-337
[10]   FORMATION OF THE CRYSTALLINE BETA-C3N4 PHASE BY DUAL-ION BEAM SPUTTERING DEPOSITION [J].
RIVIERE, JP ;
TEXIER, D ;
DELAFOND, J ;
JAOUEN, M ;
MATHE, EL ;
CHAUMONT, J .
MATERIALS LETTERS, 1995, 22 (1-2) :115-118