Mechanical Control of Electroresistive Switching

被引：52

作者：

Kim, Yunseok ^{[1
,2
]}

Kelly, Simon J. ^{[1
,3
]}

Morozovska, Anna ^{[4
]}

Rahani, Ehsan Kabiri ^{[5
]}

Strelcov, Evgheni ^{[1
]}

Eliseev, Eugene ^{[6
]}

Jesse, Stephen ^{[1
]}

Biegalski, Michael D. ^{[1
]}

Balke, Nina ^{[1
]}

Benedek, Nicole ^{[7
]}

Strukov, Dmitri ^{[8
]}

Aarts, J. ^{[3
]}

Hwang, Inrok ^{[9
]}

Oh, Sungtaek ^{[9
]}

Choi, Jin Sik ^{[9
]}

Choi, Taekjib ^{[10
,11
]}

Park, Bae Ho ^{[9
]}

Shenoy, Vivek B. ^{[12
]}

Maksymovych, Peter ^{[1
]}

Kalinin, Sergei V. ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[3] Leiden Univ, Leiden Inst Phys, NL-2333 CA Leiden, Netherlands

[4] Natl Acad Sci Ukraine, Inst Phys, UA-03028 Kiev, Ukraine

[5] Brown Univ, Sch Engn, Providence, RI 02906 USA

[6] Natl Acad Sci Ukraine, Inst Problems Mat Sci, UA-03142 Kiev, Ukraine

[7] Univ Texas Austin, Mat Sci & Engn Program, Austin, TX 78712 USA

[8] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[9] Konkuk Univ, Dept Phys, Div Quantum Phases & Devices, Seoul 143701, South Korea

[10] Sejong Univ, Hybrid Mat Res Ctr, Seoul 143747, South Korea

[11] Sejong Univ, Dept Nanotechnol & Adv Mat Engn, Seoul 143747, South Korea

[12] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

来源：

NANO LETTERS | 2013年 / 13卷 / 09期

基金：

新加坡国家研究基金会; 美国国家科学基金会;

关键词：

Piezochemical effect; pressure; mechanical force; metal-insulator transition; AFM; LATTICE-PARAMETER; EXCHANGE; TRIBOELECTRICITY; TRANSITION; TRANSPORT; NIO;

D O I：

10.1021/nl401411r

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Hysteretic metal-insulator transitions (MIT) mediated by ionic dynamics or ferroic phase transitions underpin emergent applications for nonvolatile memories and logic devices. The vast majority of applications and studies have explored the MIT coupled to the electric field or temperarture. Here, we argue that MIT coupled to ionic dynamics should be controlled by mechanical stimuli, the behavior we refer to as the piezochemical effect. We verify this effect experimentally and demonstrate that it allows both studying materials physics and enabling novel data storage technologies with mechanical writing and current-based readout.

引用

页码：4068 / 4074

页数：7

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