Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors

被引：132

作者：

Chang, S. H. ^{[1
]}

Chae, S. C. ^{[1
]}

Lee, S. B. ^{[1
]}

Liu, C. ^{[1
]}

Noh, T. W. ^{[1
]}

Lee, J. S.

Kahng, B.

Jang, J. H. ^{[4
]}

Kim, M. Y. ^{[4
]}

Kim, D. -W. ^{[2
,5
]}

Jung, C. U. ^{[3
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, ReCOE & FPRD, Seoul 151747, South Korea

[2] Ewha Womans Univ, Div Nano Sci, Seoul 120750, South Korea

[3] Hankuk Univ Foreign Studies, Dept Phys, Yongin 449791, Gyeonggi, South Korea

[4] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151747, South Korea

[5] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 18期

关键词：

D O I：

10.1063/1.2924304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses t(BE) and investigated their resistance switching behaviors. The capacitors with t(BE)>= 50 nm exhibited typical unipolar resistance memory switching, while those with t(BE)<= 30 nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent stability of conducting filaments. In particular, the thinner tBE makes dissipation of Joule heat less efficient, so the filaments will be at a higher temperature and become less stable. This study demonstrates the importance of heat dissipation in resistance random access memory. (C) 2008 American Institute Of Physics.

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