Structural properties and resistance-switching behavior of thermally grown NiO thin films

被引:10
作者
Kim, Dong-Wook [1 ]
Jung, Ranju [2 ]
Park, Bae Ho [3 ]
Li, Xiang-Shu [2 ]
Park, Chanwoo [1 ]
Shin, Seongmo [1 ]
Kim, Dong-Chirl [2 ]
Lee, Chang Won [2 ]
Se, Sunae [2 ]
机构
[1] Hanyang Univ, Dept Appl Phys, Ansan 426791, South Korea
[2] Samsung Adv Inst Technol, Suwon 440600, Kyeonggi, South Korea
[3] Konkuk Univ, Dept Phys, Seoul 143701, South Korea
关键词
NiO; thermal oxidation; resistance switching;
D O I
10.1143/JJAP.47.1635
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated the structural and electrical properties of polycrystalline NiO thin films on Pt electrodes formed by thermal oxidation. A Ni-Pt alloy phase was found at the interface, which could be explained by the oxidation kinetics and reactions of Ni, NiO, and Pt. An increase in the oxidation temperature decreased the volume of the alloy layer and improved the crystalline quality of the NiO thin films. Pt/NiO/Pt structures were fabricated, and they showed reversible resistance switching from a high-resistance state (HRS) to a low-resistance state (LRS) and vice versa during unipolar current-voltage measurements. The oxidation temperature affected (did not affect) the HRS (LRS) resistance of the Pt/NiO/Pt structures. This indicated that the transport characteristics of HRS and LRS should be different.
引用
收藏
页码:1635 / 1638
页数:4
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