Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films

被引：258

作者：

Kim, Kyung Min

Choi, Byung Joon

Hwang, Cheol Seong ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 24期

关键词：

D O I：

10.1063/1.2748312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The resistance switching mechanism of TiO2 films under voltage sweep mode was investigated. From the observed soft set of Pt/TiO2/Pt sample and from the polarity-dependant switching behavior of Ir(O)/TiO2/Pt sample, local rupture and recovery of conducting filaments near the anode interface wer identified as the switching mechanism. This is consistent with the authors' recent observation [K. Kim , Electrchem. Solid-State Lett. 9, G343 (2006)] of the resistance switching property of Al2O3/TiO2 multilayers, where switching was controlled by the layer close to the anode. It appears that most parts of the filaments are preserved during switching and only a small portion of the film near the anode contributes to switching. (c) 2007 American Institute of Physics.

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页数：3

相关论文

共 14 条

[1] First-principles study of point defects in rutile TiO2-x [J].

Cho, Eunae ;

Han, Seungwu ;

Ahn, Hyo-Shin ;

Lee, Kwang-Ryeol ;

Kim, Seong Keun ;

Hwang, Cheol Seong .

PHYSICAL REVIEW B, 2006, 73 (19)

[2] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].

Choi, BJ ;

Jeong, DS ;

Kim, SK ;

Rohde, C ;

Choi, S ;

Oh, JH ;

Kim, HJ ;

Hwang, CS ;

Szot, K ;

Waser, R ;

Reichenberg, B ;

Tiedke, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[3] Study on the resistive switching time of TiO2 thin films [J].

Choi, Byung Joon ;

Choi, Seol ;

Kim, Kyung Min ;

Shin, Yong Cheol ;

Hwang, Cheol Seong ;

Hwang, Sung-Yeon ;

Cho, Sung-sil ;

Park, Sanghyun ;

Hong, Suk-Kyoung .

APPLIED PHYSICS LETTERS, 2006, 89 (01)

[4] ELECTRICAL PHENOMENA IN AMORPHOUS OXIDE FILMS [J].

DEARNALEY, G ;

STONEHAM, AM ;

MORGAN, DV .

REPORTS ON PROGRESS IN PHYSICS, 1970, 33 (11) :1129-+

[5] Study of the negative resistance phenomenon in transition metal oxide films from a statistical mechanics point of view [J].

Jeong, Doo Seok ;

Choi, Byung Joon ;

Hwang, Cheol Seong .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)

[6] Impedance spectroscopy of TiO2 thin films showing resistive switching [J].

Jeong, Doo Seok ;

Schroeder, Herbert ;

Waser, Rainer .

APPLIED PHYSICS LETTERS, 2006, 89 (08)

[7] Reasons for obtaining an optical dielectric constant from the Poole-Frenkel conduction behavior of atomic-layer-deposited HfO2 films -: art. no. 0729030 [J].

Jeong, DS ;

Park, HB ;

Hwang, CS .

APPLIED PHYSICS LETTERS, 2005, 86 (07) :1-3

[8]

KIM HJ, 2006, APPL PHYS LETT, V88, P32106

[9] Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes [J].

Kim, Kyung Min ;

Choi, Byung Joon ;

Jeong, Doo Seok ;

Hwang, Cheol Seong ;

Han, Seungwu .

APPLIED PHYSICS LETTERS, 2006, 89 (16)

[10] Resistive switching in Pt/Al2O3/TiO2/Ru stacked structures [J].

Kim, Kyung Min ;

Choi, Byung Joon ;

Koo, Bon Wook ;

Choi, Seol ;

Jeong, Doo Seok ;

Hwang, Cheol Seong .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (12) :G343-G346