Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes

被引：63

作者：

Kim, Kyung Min ^{[1
]}

Choi, Byung Joon

Jeong, Doo Seok

Hwang, Cheol Seong

Han, Seungwu

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[3] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea

[4] Ewha Womans Univ, Div Nano Sci, Seoul 120750, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期

关键词：

D O I：

10.1063/1.2361268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of electron injection on the electric-pulse-induced resistive switching of Pt/TiO2 thin film/Pt structure was studied by current-voltage (I-V) measurements. The electron injection was increased by annealing the sample in a N-2 atmosphere or measuring the I-V characteristics at high temperatures (> 100 degrees C). The switching from the high-resistance state (HRS) to the low-resistance state by a filamentary mechanism was suppressed when the carrier injection by Schottky emission or space-charge-limited conduction (SCLC) was excessive. Interfacial potential barrier played a crucial role in determining the carrier injection. Switching was observed (not observed) when the HRS resistance was low (high) although SCLC was observed.

引用

页数：3

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