Growth of GaN and Al0.2Ga0.8N on patterened substrates via organometallic vapor phase epitaxy

被引：112

作者：

Nam, OH ^{[1
]}

Bremser, MD ^{[1
]}

Ward, BL ^{[1
]}

Nemanich, RJ ^{[1
]}

Davis, RF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV, DEPT PHYS, RALEIGH, NC 27695 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 5A期

关键词：

GaN; AlGaN; 6H-SiC; selective growth; organometallic vapor phase epitaxy; hexagonal pyramid array; field emission; lateral diffusion;

D O I：

10.1143/JJAP.36.L532

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The selective growth of GaN and Al0.2Ga0.8N has been achieved on stripe and circular patterned GaN/AlN/6H-SiC(0001) multilayer substrates. Growth morphologies on the stripe patterns were a function of the widths of the stripes and the now rate of triethylgallium. No ridge growth was observed along the top edges of the truncated stripe patterns. Smooth (0001) top facets formed on stripes greater than or equal to 5 mu m wide. Uniform hexagonal pyramid arrays of undoped GaN and Si-doped GaN were successfully grown on 5 mu m circular patterns. Field emission measurements of a Si-doped GaN hexagonal pyramid array exhibited a turn-on held of 25 V/mu m for an emission current of 10.8 nA at an anode-to-sample distance of 27 mu m.

引用

页码：L532 / L535

页数：4

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