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Topological Hall effect and Berry phase in magnetic nanostructures
被引:468
作者:
Bruno, P
Dugaev, VK
Taillefumier, M
机构:
[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle An Der Saale, Germany
[2] NASU, Inst Problems Mat Sci, UA-58001 Chernovtsy, Ukraine
[3] CNRS, Lab Louis Neel, F-38042 Grenoble 09, France
关键词:
D O I:
10.1103/PhysRevLett.93.096806
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
We discuss the anomalous Hall effect in a two-dimensional electron gas subject to a spatially varying magnetization. This topological Hall effect does not require any spin-orbit coupling and arises solely from Berry phase acquired by an electron moving in a smoothly varying magnetization. We propose an experiment with a structure containing 2D electrons or holes of diluted magnetic semiconductor subject to the stray field of a lattice of magnetic nanocylinders. The striking behavior predicted for such a system (of which all relevant parameters are well known) allows one to observe unambiguously the topological Hall effect and to distinguish it from other mechanisms.
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页码:096806 / 1
页数:4
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