共 18 条
[1]
AKIZUKI M, 1995, NUCL INSTRUM METH B, V99, P225
[5]
A high performance 50nm PMOSFET using decaborane (B10H14) ion implantation and 2-step activation annealing process
[J].
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST,
1997,
:471-474
[8]
MATSUO J, 1996, NUCL INSTRUM METH B, V79, P223
[9]
NISHIYAMA A, 1999, P 15 INT C APPL ACC, V421