Indium oxide film formation by O2 cluster ion-assisted deposition

被引：27

作者：

Qin, W ^{[1
]}

Howson, RP

Akizuki, M

Matsuo, J

Takaoka, G

Yamada, I

机构：

[1] Kyoto Univ, Ion Beam Engn Expt Lab, Sakyo Ku, Kyoto 60601, Japan

[2] Loughborough Univ Technol, Dept Phys, Loughborough LE11 3TU, Leics, England

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1998年 / 54卷 / 1-3期

关键词：

indium oxide film; room temperature; cluster ions; non-critical process;

D O I：

10.1016/S0254-0584(98)00109-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It has been difficult to deposit high quality indium tin oxide (ITO) films on to substrates at low temperature (below 100 degrees C) or subjected to post-deposition annealing. We have developed a new process based on O-2 cluster ion assisted deposition of metallic indium and carried out deposition of high quality indium oxide films. At optimized indium deposition rate, a film with resistivity of 4.7 x 10(-4) Omega cm and transparency of 80% for the wavelength of 550 nm, has been deposited at room temperature on to soda lime slide glass substrates. A wide process window of indium deposition rate has also been observed. This indicates that a reproducible and stable process is obtained with this new technique. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：258 / 261

页数：4

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