SiO2 film formation at room temperature by gas cluster ion beam oxidation

被引：18

作者：

Akizuki, M ^{[1
]}

Matsuo, J ^{[1
]}

Yamada, I ^{[1
]}

Harada, M ^{[1
]}

Ogasawara, S ^{[1
]}

Doi, A ^{[1
]}

机构：

[1] SANYO ELECT CO LTD,CTR MICROELECTR RES,GIFU 5030,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 112卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)01235-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

High quality SiO2 film of thicknesses less than 11 nm were formed on Si substrate surfaces at room temperature by irradiation with O-2 and CO2 cluster ions, The acceleration voltages were in the range of 5-10 kV. The minimum cluster size was 250 molecules, thus the maximum energy per molecule was less than 40 eV. These SiO2 films which were formed had a stoichiometric composition, smooth interfaces with Si substrates and low carbon content. The results indicate a high chemical reactivity of gas cluster ions. Thus, the gas cluster ion beam technique has a potential for the formation of various kinds of films at low temperatures.

引用

页码：83 / 85

页数：3

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