Low-temperature oxidation of silicon by O-2 cluster ion beams

被引：18

作者：

Akizuki, M ^{[1
]}

Matsuo, J ^{[1
]}

Ogasawara, S ^{[1
]}

Harada, M ^{[1
]}

Doi, A ^{[1
]}

Yamada, I ^{[1
]}

机构：

[1] SANYO ELECT CO LTD,MICROELECTR RES CTR,GIFU 50301,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

cluster; ion beam; damage; room temperature; oxidation; oxygen; silicon; gate oxide;

D O I：

10.1143/JJAP.35.1450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality SiO2 films up to 11 nm thick were grown on Si substrate surfaces at room temperature by O-2 cluster ion irradiation. No damage was observed after N-2 annealing at 400 degrees C for 30 min in the I-V characteristics of the thermally grown gate oxides irradiated with 5 keV Ar cluster ions. These results indicate that O-2 cluster ions strongly enhanced the oxidation with low irradiation damage.

引用

页码：1450 / 1453

页数：4

共 15 条

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