Electrical noise in ultra thin giant magnetoresistors

被引:6
作者
Lisauskas, A [1 ]
Khartsev, SI [1 ]
Grishin, AM [1 ]
Palenskis, V [1 ]
机构
[1] Royal Inst Technol, Dept Condensed Matter Phys, S-10044 Stockholm, Sweden
来源
MULTICOMPONENT OXIDE FILMS FOR ELECTRONICS | 1999年 / 574卷
关键词
D O I
10.1557/PROC-574-365
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report measurements of low frequency 1/f excess noise for the series of La0.75Sr0.25MnO3 (LSMO) giant magnetoresistive thin epitaxial films with thickness of 42, 50, 100, and 600 Pi. Fabricated manganite films experience semiconductor-normal metal (paramagnetic-ferromagnetic) phase transition with the temperature change. The transition manifests itself by the sharp change of resistivity and characteristic peak of magnetoresistivity. Thickness decrease results in lowering the transition temperature and increasing of resistivity. The noise spectra has 1/f(alpha) behavior with alpha approximate to 1 +/- 0.2. The voltage fluctuations spectral density shows quadratic dependence on current indicating that observed noise is caused by the resistance fluctuations. Noise level, temperature coefficient of resisistvity and magnetoresistance increase for thin films. Therefore, the operation point (transition temperature) can be tailored from 330 K to 220 K by changing only the film thickness while the performance of temperature and magnetic field LSMO sensors can be maintained almost constant in thickness range down to 100 Angstrom.
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页码:365 / 370
页数:6
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