Surface termination of the NdGaO3(110)

被引：17

作者：

Dirsyte, R. ^{[1
]}

Schwarzkopf, J. ^{[1
]}

Wagner, G. ^{[1
]}

Lienemann, J. ^{[2
]}

Busch, M. ^{[2
]}

Winter, H. ^{[2
]}

Fornari, R. ^{[1
,2
]}

机构：

[1] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

[2] Humboldt Univ, Dept Phys, D-12489 Berlin, Germany

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 20期

关键词：

Neodymium gallate; Substrate; Surface termination; AES; SCANNING-TUNNELING-MICROSCOPY; THIN-FILMS; YBA2CU3O7-DELTA FILMS; SUBSTRATE SURFACES; SRTIO3(001); GALLATE;

D O I：

10.1016/j.apsusc.2009.06.052

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Auger electron spectroscopy using excitation via grazing impact of protons was applied to determine the elemental composition of the topmost and near-surface layers of a NdGaO3(1 1 0) substrate. The preparation conditions of vicinal NdGaO3 substrates were optimized by varying the annealing temperature, time, and gas atmosphere. Well prepared surfaces show regularly arranged, atomically smooth terraces with single-atomic steps. The surfaces were always NdO terminated with a small amount of Ga (2-4%) atoms on the surface. A Ga and O depletion layer with a thickness of about 4 nm has been detected at optimized preparation conditions. (C) 2009 Elsevier B. V. All rights reserved.

引用

页码：8685 / 8687

页数：3

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