Structure, composition and electro-optical properties of n-type amorphous and microcrystalline silicon thin films

被引:5
作者
Martins, R [1 ]
Macarico, A [1 ]
Vieira, M [1 ]
Ferreira, I [1 ]
Fortunato, E [1 ]
机构
[1] INST DEV NEW TECHNOL, CTR EXCELLENCE MICROELECT & OPTOELECT PROC, P-2825 MONTE DE CAPARICA, PORTUGAL
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1997年 / 76卷 / 03期
关键词
D O I
10.1080/01418639708241090
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper deals with the structure, composition and electro-optical characteristics of n-type amorphous and microcrystalline silicon thin films produced by plasma-enhanced chemical vapour deposition in a hydrogen-helium mixture. In addition, special emphasis is given to the role that hydrogen incorporation plays in the film's properties and in the characteristics of n-type microcrystalline films presenting simultaneously optical gaps of about 2.3 eV (controlled by the hydrogen content in the film), a dark conductivity of 6.5 S cm(-1) and a Hall mobility of about 0.86 cm(2) V-1 s(-1), the highest combined values for n-type microcrystalline silicon films, as far as we know.
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收藏
页码:249 / 258
页数:10
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