Microscopic view of charge injection in an organic semiconductor

被引:76
作者
Silveira, WR [1 ]
Marohn, JA [1 ]
机构
[1] Cornell Univ, Dept Chem & Chem Biol, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.93.116104
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have measured the chemical potential and capacitance in a disordered organic semiconductor by electric force microscopy, following the electric field and interfacial charge density microscopically as the semiconductor undergoes a transition from Ohmic to space-charge limited conduction. Electric field and charge density at the metal-organic interface are inferred from the chemical potential and current. The charge density at this interface increases with electric field much faster than is predicted by the standard diffusion-limited thermionic emission theories.
引用
收藏
页码:116104 / 1
页数:4
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