Growth control of MnAs on GaAs(001) by reflection high-energy electron diffraction

被引：37

作者：

Schippan, F ^{[1
]}

Kästner, M ^{[1
]}

Däweritz, L ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 07期

关键词：

D O I：

10.1063/1.125600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The MnAs((1) over bar 100) surface is investigated during growth by reflection high-energy electron diffraction (RHEED). (1x2), (1x1), (2x1) and (4x1) RHEED patterns have been observed by varying the growth conditions, indicating various stoichiometry dependent reconstructions. A phase diagram showing the dependence of the reconstructions on the growth parameters is presented. RHEED intensity oscillations have been found, evidencing layer-by-layer growth of MnAs. (C) 2000 American Institute of Physics. [S0003-6951(00)02107-0].

引用

页码：834 / 836

页数：3

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