Epitaxial MnAs/GaAs/MnAs trilayer magnetic heterostructures

被引：71

作者：

Tanaka, M ^{[1
]}

Saito, K

Nishinaga, T

机构：

[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Japan Sci & Technol Corp, PRESTO, Kawaguchi 332, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 01期

关键词：

D O I：

10.1063/1.122953

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have successfully grown MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer heterostructures on GaAs(111) B substrates by molecular beam epitaxy. The epitaxial orientations of MnAs and GaAs are (0001) and (111), respectively, as expected. It was found that epitaxial monocrystalline GaAs can be grown on the As-rich (3X2)-(0001) MnAs surface. Cross-sectional images by transmission electron microscopy showed that the trilayers are formed as intended with fairly smooth and atomically abrupt interfaces. Double-step features were observed in magnetization characteristics due to the difference in coercive force between the top and bottom MnAs layers. The interlayer coupling was small when the thickness of the GaAs spacer layer was 5-10 nm. (C) 1999 American Institute of Physics. [S0003-6951(99)02101-4].

引用

页码：64 / 66

页数：3

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