EPITAXIAL MNGA/NIGA MAGNETIC MULTILAYERS ON GAAS

被引：42

作者：

TANAKA, M ^{[1
]}

HARBISON, JP ^{[1
]}

SANDS, T ^{[1
]}

PHILIPS, B ^{[1
]}

CHEEKS, TL ^{[1
]}

DEBOECK, J ^{[1
]}

FLOREZ, LT ^{[1
]}

KERAMIDAS, VG ^{[1
]}

机构：

[1] IMEC,B-3001 LOUVAIN,BELGIUM

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.109932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown a new class of epitaxial metallic multilayers consisting of ultrathin ferromagnetic tetragonal MnGa and nonmagnetic (CsCl-type) NiGa on (001) GaAs substrates by molecular beam epitaxy. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy analyses show that MnGa/NiGa multilayers with atomically abrupt interfaces are formed with the expected epitaxial orientations, and, in particular, that the c-axis of the tetragonal structure of the MnGa film is aligned perpendicular to the substrate. Perpendicular magnetization of the MnGa/NiGa multilayers was evidenced by both vibrating sample magnetometer and extraordinary Hall effect measurements at room temperature, with higher values (M(r) = 267-302 emu/cm3) of remanent magnetization than those of previously reported MnGa and MnAl thin films. The capability of growing this new class of materials will allow a new degree of artificial materials design on semiconductor substrates.

引用

页码：696 / 698

页数：3

共 12 条

[1] MAGNETIC TETRAGONAL DELTA PHASE IN MN-GA BINARY [J].