STM excited electroluminescence of GaN microcrystals

被引：3

作者：

Liebheit, A ^{[1
]}

Schwartzkopff, M ^{[1
]}

Radojkovic, P ^{[1
]}

Hartmann, E ^{[1
]}

Hechtl, E ^{[1
]}

PetrovaKoch, V ^{[1
]}

Koch, F ^{[1
]}

机构：

[1] TECH UNIV MUNICH,PHYS DEPT E16,D-85748 GARCHING,GERMANY

来源：

JOURNAL OF LUMINESCENCE | 1997年 / 72-4卷

关键词：

STM; GaN; luminescence;

D O I：

10.1016/S0022-2313(96)00298-0

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on a system of GaN crystallites grown onto Si substrates with and without preconditioning of the surface layer by Si implantation. Upon electronic excitation by the tip of a scanning tunneling microscope (STM)? site-dependent luminescence spectra are obtained. implying the possibility to correlate structural and optical properties at the nanometer scale. Voltage-polarity-dependent measurements lead to a simple model for the excitation mechanism.

引用

页码：994 / 996

页数：3

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