High-temperature electron and hole mobility in CdTe

被引：66

作者：

Turkevych, I ^{[1
]}

Grill, R ^{[1
]}

Franc, J ^{[1
]}

Belas, E ^{[1
]}

Höschl, P ^{[1
]}

Moravec, P ^{[1
]}

机构：

[1] Charles Univ, Inst Phys, CZ-12116 Prague 2, Czech Republic

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2002年 / 17卷 / 10期

关键词：

D O I：

10.1088/0268-1242/17/10/305

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a novel technology for forming high-temperature stable ohmic contacts on CdTe, and we have measured the Hall mobilities of electrons at temperatures between 300-1300 K and holes between 225-600 K. The temperature interval also covers the region 300-600 K. where no data have yet been presented. The measured mobilities agree very well with theoretical calculations.

引用

页码：1064 / 1066

页数：3

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