The exciton-polariton effect on the photoluminescence of GaN on sapphire

被引：27

作者：

Gil, B

Clur, S

Briot, O

机构：

[1] Ctr. Natl. de la Rech. Scientifique, Groupe d'Etude des Semiconducteurs, Université de Montpellier II, 34095 Montpellier Cedex 5

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 104卷 / 05期

关键词：

D O I：

10.1016/S0038-1098(97)00284-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the observation of free exciton photoluminescence associated with low and upper-polariton branch in GaN on sapphire. This is observed for both A and B lines. (C) 1997 Published by Elsevier Science Ltd.

引用

页码：267 / 270

页数：4

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