MOVPE growth and optical properties of GaN deposited on c-plane sapphire

被引：10

作者：

Briot, O ^{[1
]}

Gil, B ^{[1
]}

Tchounkeu, M ^{[1
]}

Aulombard, RL ^{[1
]}

Demangeot, F ^{[1
]}

Frandon, J ^{[1
]}

Renucci, M ^{[1
]}

机构：

[1] UNIV TOULOUSE 3,PHYS SOLIDES LAB,F-31062 TOULOUSE,FRANCE

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1997年 / 26卷 / 03期

关键词：

GaN; growth; metalorganic vapor phase epitaxy (MOVPE); photoluminescence; Raman spectroscopy;

D O I：

10.1007/s11664-997-0167-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We address combined utilization of temperature dependent reflectance, photoluminescence, and Raman spectroscopy measurements to optimize the structural and electronic properties of GaN epilayers deposited on sapphire. Last, we study residual strain fields in such epilayers.

引用

页码：294 / 300

页数：7

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