The electronic structure of poly(3,4-ethylene-dioxythiophene): studied by XPS and UPS

被引:147
作者
Xing, KZ
Fahlman, M
Chen, XW
Inganas, O
Salaneck, WR
机构
[1] LINKOPING UNIV,IFM,DEPT PHYS,S-58183 LINKOPING,SWEDEN
[2] OHIO STATE UNIV,DEPT PHYS,COLUMBUS,OH 43210
关键词
polythiophene and derivatives; electronic structure; photoelectron spectroscopy;
D O I
10.1016/S0379-6779(97)81212-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structure of poly(3,4-ethylene-dioxythiophene) (PEDOT) has been investigated by X-ray and ultraviolet photoelectron spectroscopies as well as quantum chemical calculations. Significant differences have been observed in the photoelectron spectra between as prepared chemically neutralized and anion-doped PEDOT thin films. The electronic structures of as-prepared neutral and doped PEDOT obtained from the photoelectron spectra are in good agreement with the results of new quantum chemical electronic structure calculations. No significant thermal-induced effects have been detected for either as-prepared neutral or doped PEDOT films. The concentration of anions on the polymer surface depends upon the size of the anion, with large anions, like polystyrene sulfonate (PSS-) base, being much more likely to cover the surface of a PEDOT film than small anion, such as tosylate(p-methyl benzyl sulfonate). This surface concentration effect probably makes the large-anion-doped polymer a more suitable candidate as an electrode in polymer light-emitting diodes (LEDs) than the small-anion-doped polymer. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:161 / 165
页数:5
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