Transparent conducting Zn1-xMgxO:(Al,In) thin films

被引:131
作者
Cohen, DJ [1 ]
Ruthe, KC [1 ]
Barnett, SA [1 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
关键词
D O I
10.1063/1.1760239
中图分类号
O59 [应用物理学];
学科分类号
摘要
Zn1-xMgxO:Al thin films have been grown epitaxially on c-plane sapphire substrates by direct current reactive magnetron sputtering. Structural evaluation indicated that the ZnMgO films had similar crystalline perfection as ZnO films grown under similar conditions. Postdeposition annealing with in situ In doping was done at 415 degreesC for 4 h in H-2/Ar mixtures, resulting in improved electrical properties. Increasing the Mg content from 0 to 20 at. % increased the band gap but decreased the conductivity, mobility, and electron density in annealed films. The decrease in mobility was explained by a combination of increasing electron effective mass and alloy disorder scattering. Increasing the Al dopant content in ZnMgO had similar effects as in pure ZnO, increasing the carrier density and optical band gap but decreasing the mobility. Band gaps of 3.76 eV were achieved in the Zn0.8Mg0.2O:(Al,In) films with a corresponding resistivity of 2x10(-2) Omega cm, a carrier concentration of 4x10(19) cm(-3), and a mobility of 7 cm(2)/V s. (C) 2004 American Institute of Physics.
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页码:459 / 467
页数:9
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