Deuterium-oxygen exchange on diamond (100) - a study by ERDA, RBS and TOF-SIMS

被引:6
作者
Loh, KP
Xie, XN
Zhang, X
Teo, EJ
Osipowicz, T
Lai, MY
Yakovlev, N
机构
[1] Natl Univ Singapore, Dept Chem, Singapore, Singapore
[2] Natl Univ Singapore, Dept Phys, Singapore 117548, Singapore
[3] Inst Mat Res & Engn, Singapore, Singapore
关键词
atomic oxygen; deuterium; Rutherford backscattering; time-of-flight secondary ion mass spectrometry;
D O I
10.1016/S0925-9635(02)00015-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The exchange of radio-frequency plasma-excited atomic O with chemisorbed D, and vice versa, on single crystalline diamond (100) 2 x 1 has been investigated by elastic recoil detection analysis (ERDA), Rutherford backscattering spectrometry (RBS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS). It was found that the O-D, as well as D-O, exchange processes were thermally activated by the diamond substrate. The surface D was only partially exchanged by atomic O at room temperature. At elevated temperatures, the replacement of D by O was greatly enhanced, with 80% substitution by O at 300 degreesC. It was also observed that the uptake of O proceeded more readily on the pre-deuterated surface compared to the clean surface. Ultra-shallow depth profiling revealed that atomic beam treatment of single crystalline samples at 800 degreesC resulted in only superficial uptake of D and O, with no surface incorporation within the shallow analysis depth. The replacement of pre-adsorbed O by RF-excited atomic D was also studied by TOF-SIMS. Pre-adsorbed O was relatively stable and resisted removal at 300 degreesC. D dosed onto the oxygenated surface was found to co-adsorb with O, possibly as surface bound OD species. Mechanisms for the O-D and D-O exchange processes were discussed in connection with the atomic structure of the C(100) surface. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1385 / 1390
页数:6
相关论文
共 20 条
[1]  
Benninghoven A., 1987, SECONDARY ION MASS S
[2]   Deuterium depth profiles at CVD diamond surfaces [J].
Bergmaier, A ;
Dollinger, G ;
Aleksov, A ;
Gluche, P ;
Kohn, E .
SURFACE SCIENCE, 2001, 481 (1-3) :L433-L436
[3]   Fabrication and characterization of phosphorus-doped diamond field emitters in triode-type field emission arrays [J].
Chen, CF ;
Tsai, CL ;
Lin, CL .
DIAMOND AND RELATED MATERIALS, 2001, 10 (3-7) :834-839
[4]   Electron affinity of the bare and hydrogen covered single crystal diamond (111) surface [J].
Cui, JB ;
Ristein, J ;
Ley, L .
PHYSICAL REVIEW LETTERS, 1998, 81 (02) :429-432
[5]   An investigation of the surface reactivity of diamond photocathodes with molecular and atomic oxygen species [J].
Foord, JS ;
Hian, LC ;
Jackman, RB .
DIAMOND AND RELATED MATERIALS, 2001, 10 (3-7) :710-714
[6]   Diamond surface-channel FET structure with 200 V breakdown voltage [J].
Gluche, P ;
Aleksov, A ;
Vescan, A ;
Ebert, W ;
Kohn, E .
IEEE ELECTRON DEVICE LETTERS, 1997, 18 (11) :547-549
[7]   EFFECTS OF OXYGEN ON DIAMOND GROWTH [J].
HARRIS, SJ ;
WEINER, AM .
APPLIED PHYSICS LETTERS, 1989, 55 (21) :2179-2181
[8]   Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films [J].
Hayashi, K ;
Yamanaka, S ;
Watanabe, H ;
Sekiguchi, T ;
Okushi, H ;
Kajimura, K .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (02) :744-753
[9]   Hydrogen-terminated diamond surfaces and interfaces [J].
Kawarada, H .
SURFACE SCIENCE REPORTS, 1996, 26 (07) :205-259
[10]  
KOLESKE DD, 1995, J CHEM PHYS, V102, P1