Manipulation of the spin memory of electrons in n-GaAs -: art. no. 256801

被引：70

作者：

Dzhioev, RI

Korenev, VL

Merkulov, IA

Zakharchenya, BP

Gammon, D

Efros, AL

Katzer, DS

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] USN, Res Lab, Washington, DC 20375 USA

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.88.256801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the optical manipulation of the electron spin relaxation time in a GaAs-based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and that the rate can be controlled by electron-electron interactions. This time has been changed from 300 ns down to 5 ns by variation of the laser frequency. This modification originates in the optically induced depletion of an n-GaAs layer.

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页码：4 / 256801

页数：4

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