Atomic layer deposition of TiO2 thin films from TiI4 and H2O

被引：73

作者：

Aarik, J

Aidla, A

Uustare, T

Kukli, K

Sammelselg, V

Ritala, M

Leskelä, M

机构：

[1] Univ Tartu, Inst Mat Sci, EE-51010 Tartu, Estonia

[2] Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia

[3] Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia

[4] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland

来源：

APPLIED SURFACE SCIENCE | 2002年 / 193卷 / 1-4期

关键词：

atomic layer deposition; titanium dioxide; surface reactions; crystal structure; epitaxy;

D O I：

10.1016/S0169-4332(02)00497-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Atomic layer deposition of titanium dioxide thin films from TiI4 and H2O was investigated. The method allowed self-limited growth of titanium dioxide (TiO2) films with anatase structure on Si(1 0 0) and amorphous SiO2 substrates at temperatures 135-375 degreesC provided that sufficient H2O doses were used. Rutile films were obtained at 445 degreesC. The growth rate increased with substrate temperature and ranged from 0.07 to 0.18 nm per cycle. On alpha-Al2O3(0 1 2) substrates, epitaxial growth of rutile was observed at 445 degreesC. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：277 / 286

页数：10

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