Synaptic Metaplasticity Realized in Oxide Memristive Devices

被引：219

作者：

Tan, Zheng-Hua ^{[1
]}

Yang, Rui ^{[1
]}

Terabe, Kazuya ^{[2
]}

Yin, Xue-Bing ^{[1
]}

Zhang, Xiao-Dong ^{[1
]}

Guo, Xin ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, Lab Solid State Ion, Wuhan 430074, Peoples R China

[2] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 02期

基金：

中国国家自然科学基金;

关键词：

PLASTICITY; MEMORY; RESISTANCE; PERFORMANCE; EVOLUTION; SYNAPSES; KINETICS; CHANNEL;

D O I：

10.1002/adma.201503575

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Metaplasticity, a higher order of synaptic plasticity, as well as a key issue in neuroscience, is realized with artificial synapses based on a WO3 thin film, and the activity-dependent metaplastic responses of the artificial synapses, such as spike-timing-dependent plasticity, are systematically investigated. This work has significant implications in neuromorphic computation. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：377 / 384

页数：8

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