Formation of ferromagnetic submicron particles of MnAs and MnGa on GaAs substrates by ion implantation

被引：6

作者：

Ando, K

Chiba, A

Tanoue, H

Kirino, F

Tanaka, M

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[2] Hitachi Ltd, Cent Res Lab, Yokohama, Kanagawa 2440817, Japan

[3] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

关键词：

ferromagnetic particles; MnAs; MnGa; semiconductor substrate;

D O I：

10.1109/20.800558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Submicron room-temperature ferromagnets of MnAs and MnGa have been fabricated on GaAs semiconductor substrates by Mn+ ion implantation and subsequent heat treatment at 900 degrees C under a controlled atmosphere. MnAs and MnGa particles are formed under nitrogen gas and forming (90%N-2,10%H-2) gas atmospheres, respectively. Their structural, magneto-optical and magnetic properties are characterized by superconducting quantum interference. device magnetometry, magnetic circular dichroism spectroscopy, transmission electron microscopy, and atomic and magnetic force microscopies. The MnAs precipitates grow epitaxially on GaAs substrates and show an in-plane uniaxial magnetic anisotropy.

引用

页码：3463 / 3465

页数：3

共 7 条

[1] Uniaxial magnetic anisotropy of submicron MnAs ferromagnets in GaAs semiconductors [J].