Carbon nanotube transistors: An evaluation

被引：10

作者：

Castro, LC ^{[1
]}

John, DL ^{[1
]}

Pulfrey, DL ^{[1
]}

机构：

[1] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V6T 1Z4, Canada

来源：

DEVICE AND PROCESS TECHNOLOGIES FOR MEMS, MICROELECTRONICS, AND PHOTONICS III | 2004年 / 5276卷

关键词：

carbon nanotubes; field-effect transistors; nanotechnology;

D O I：

10.1117/12.533349

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple, non-equilibrium model is used to evaluate the likely DC performance of carbon nanotube field-effect transistors. It is shown that, by appropriate work function engineering of the source, drain and gate contacts to the device, the following desirable properties should be realizable: a sub-threshold slope close to the thermionic limit: a conductance close to the interfacial limit; an ON/OFF ratio of around 10(3). ON current and transconductance close to the low-quantum-capacitance limit.

引用

页码：1 / 10

页数：10