Analysis of the resistance of two-dimensional holes in SiGe over a wide temperature range

被引：10

作者：

Senz, V ^{[1
]}

Ihn, T

Heinzel, T

Ensslin, K

Dehlinger, G

Grützmacher, D

Gennser, U

Hwang, EH

Das Sarma, S

机构：

[1] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Paul Scherrer Inst, CH-5234 Villigen, Switzerland

[3] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期

关键词：

metal-insulator transition; SiGe; two-dimensional transport; scattering;

D O I：

10.1016/S1386-9477(02)00268-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The temperature dependence of a system exhibiting a meal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90 K, Using a classical scattering model we are able to simulate the non-monotonic temperature dependence of the resistivity in the metallic high density regime. We show that the temperature dependence arises from a complex interplay of metallic and insulating contributions contained in the calculation of the scattering rate I/tau(D)(E,T), each dominating in a limited temperature range. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：723 / 727

页数：5

共 14 条

[1] Colloquium:: Metallic behavior and related phenomena in two dimensions
Abrahams, E
Kravchenko, SV
Sarachik, MP
[J]. REVIEWS OF MODERN PHYSICS, 2001, 73 (02) : 251 - 266
[2] Interaction effects and phase relaxation in disordered systems
Aleiner, IL
Altshuler, BL
Gershenson, ME
[J]. WAVES IN RANDOM MEDIA, 1999, 9 (02): : 201 - 239
[3] Metal-insulator transition in 2D: resistance in the critical region
Altshuler, BL
Maslov, DL
Pudalov, VM
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 9 (02) : 209 - 225
[4] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS
ANDO, T
FOWLER, AB
STERN, F
[J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672
[5] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .2. LOW-TEMPERATURE MOBILITY
ANDO, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (12) : 3900 - 3907
[6] Charged impurity-scattering-limited low-temperature resistivity of low-density silicon inversion layers
Das Sarma, S
Hwang, EH
[J]. PHYSICAL REVIEW LETTERS, 1999, 83 (01) : 164 - 167
[7] THEORY OF FINITE-TEMPERATURE SCREENING IN A DISORDERED TWO-DIMENSIONAL ELECTRON-GAS
DASSARMA, S
[J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5401 - 5405
[8] SCATTERING MECHANISMS AFFECTING HOLE TRANSPORT IN REMOTE-DOPED SI/SIGE HETEROSTRUCTURES
EMELEUS, CJ
WHALL, TE
SMITH, DW
KUBIAK, RA
PARKER, EHC
KEARNEY, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) : 3852 - 3856
[9] ELECTRONIC TRANSPORT-PROPERTIES OF A TWO-DIMENSIONAL ELECTRON-GAS IN A SILICON QUANTUM-WELL STRUCTURE AT LOW-TEMPERATURE
GOLD, A
[J]. PHYSICAL REVIEW B, 1987, 35 (02): : 723 - 733
[10] TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY FOR THE TWO-DIMENSIONAL ELECTRON-GAS - ANALYTICAL RESULTS FOR LOW-TEMPERATURES
GOLD, A
DOLGOPOLOV, VT
[J]. PHYSICAL REVIEW B, 1986, 33 (02): : 1076 - 1084

← 1 2 →