Size dependent thermoelectric properties of silicon nanowires

被引：81

作者：

Shi, Lihong ^{[1
]}

Yao, Donglai ^{[1
]}

Zhang, Gang ^{[2
]}

Li, Baowen ^{[1
,3
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Ctr Computat Sci & Engn, Singapore 117542, Singapore

[2] ASTAR, Inst Microelect, Singapore 117685, Singapore

[3] NUS Grad Sch Integrat Sci & Engn, Singapore 117597, Singapore

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 06期

关键词：

ab initio calculations; Boltzmann equation; elemental semiconductors; nanowires; Seebeck effect; semiconductor doping; semiconductor quantum wires; silicon; tight-binding calculations; TIGHT-BINDING METHOD; THERMAL-CONDUCTIVITY; BAND-GAP; SIMULATIONS;

D O I：

10.1063/1.3204005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using first-principles tight-binding electronic structure calculation and Boltzmann transport equation, we investigate the size dependence of thermoelectric properties of silicon nanowires (SiNWs). With cross section area increasing, the electrical conductivity increases slowly, while the Seebeck coefficient reduces remarkably. This leads to a quick reduction of cooling power factor with diameter. Moreover, the figure of merit also decreases with transverse size. Our results demonstrate that in thermoelectric application, NW with small diameter is preferred. We also predict that isotopic doping can increase the value of ZT significantly. With 50% Si-29 doping (Si-28(0.5) Si-29(0.5) NW), the ZT can be increased by 31%.

引用

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