Etching and a disordered overlayer on the Ge(100)-S surface

被引：21

作者：

Gothelid, M

LeLay, G

Wigren, C

Bjorkqvist, M

Rad, M

Karlsson, UO

机构：

[1] UNIV AIX MARSEILLE 1,UFR SCI MAT,MARSEILLE,FRANCE

[2] LUND UNIV,INST PHYS,DEPT SYNCHROTRON RADIAT RES,S-22362 LUND,SWEDEN

[3] KTH,S-10044 STOCKHOLM,SWEDEN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 115卷 / 01期

基金：

瑞典研究理事会;

关键词：

D O I：

10.1016/S0169-4332(96)00850-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High resolution core level photoelectron spectroscopy (PES) and scanning tunneling microscopy (STM) have been used to study the adsorption and desorption of S on and off the Ge(100) surface. The previously proposed bridge adsorption site of S is consistent with our results at low coverage. At saturation the substrate contains several GeSx species, with x = 0.5 to 4. Both photoemission and STM reveals a non-ideal surface, with a saturation coverage above one monolayer. Furthermore, S is found to etch the substrate. The reaction products forms a disordered overlayer on top of the interface. This overlayer is transparent in the filled state STM images.

引用

页码：87 / 95

页数：9

共 21 条

[1]

Andersen J. N., 1991, SYNCHROTRON RAD NEWS, V4, P15

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