1ST-PRINCIPLES THEORY OF SULFUR ADSORPTION ON SEMI-INFINITE GE(001)

被引:42
作者
KRUGER, P
POLLMANN, J
机构
[1] Institut F̈r Theoretische Physik II, Universität M̈nster
关键词
D O I
10.1103/PhysRevLett.64.1808
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A self-consistent study of structural and electronic properties of semi-infinite Ge(001) terminated by a monolayer of sulfur is reported. Employing local-density theory together with Greens functions, we find from total-energy minimization that S adsorbs in bridge positions. The electronic spectrum saliently exhibits a dangling-bond and a bridge-bond band, which originate from the four lone-pair electrons at each sulfur adatom. They are both fully occupied. The calculated dangling-bond band is in very good agreement with photoemission data. The bridge-bond band is predicted in this Letter. © 1990 The American Physical Society.
引用
收藏
页码:1808 / 1811
页数:4
相关论文
共 13 条
  • [1] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU
    BACHELET, GB
    HAMANN, DR
    SCHLUTER, M
    [J]. PHYSICAL REVIEW B, 1982, 26 (08): : 4199 - 4228
  • [2] ARSENIC-TERMINATED GE(111) - AN IDEAL 1 X 1 SURFACE
    BRINGANS, RD
    UHRBERG, RIG
    BACHRACH, RZ
    NORTHRUP, JE
    [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (05) : 533 - 536
  • [3] SURFACE AND BULK ELECTRONIC-STRUCTURE OF GE(111) C(2X8) AND GE(111)-AS 1X1
    BRINGANS, RD
    UHRBERG, RIG
    BACHRACH, RZ
    [J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2373 - 2380
  • [4] MANY-BODY CALCULATION OF SURFACE-STATES - AS ON GE(111)
    HYBERTSEN, MS
    LOUIE, SG
    [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (15) : 1551 - 1554
  • [5] THEORY OF QUASIPARTICLE SURFACE-STATES IN SEMICONDUCTOR SURFACES
    HYBERTSEN, MS
    LOUIE, SG
    [J]. PHYSICAL REVIEW B, 1988, 38 (06): : 4033 - 4044
  • [6] SCATTERING-THEORETICAL METHOD FOR SEMICONDUCTOR SURFACES - SELF-CONSISTENT FORMULATION AND APPLICATION TO SI(001)-(2X1)
    KRUGER, P
    POLLMANN, J
    [J]. PHYSICAL REVIEW B, 1988, 38 (15): : 10578 - 10599
  • [7] 1ST-PRINCIPLES ELECTRONIC-STRUCTURE THEORY FOR SEMI-INFINITE SEMICONDUCTORS WITH APPLICATIONS TO GE(001)(2X1) AND SI(001)(2X1)
    KRUGER, P
    MAZUR, A
    POLLMANN, J
    WOLFGARTEN, G
    [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (12) : 1468 - 1471
  • [8] SURFACE-BONDING GEOMETRY OF (2X1)S/GE(001) BY THE NORMAL-EMISSION ANGLE-RESOLVED PHOTOEMISSION EXTENDED-FINE-STRUCTURE TECHNIQUE
    LEUNG, KT
    TERMINELLO, LJ
    HUSSAIN, Z
    ZHANG, XS
    HAYASHI, T
    SHIRLEY, DA
    [J]. PHYSICAL REVIEW B, 1988, 38 (12): : 8241 - 8248
  • [9] ARSENIC OVERLAYER ON SI(111) - REMOVAL OF SURFACE RECONSTRUCTION
    OLMSTEAD, MA
    BRINGANS, RD
    UHRBERG, RIG
    BACHRACH, RZ
    [J]. PHYSICAL REVIEW B, 1986, 34 (08): : 6041 - 6044
  • [10] SELF-INTERACTION CORRECTION TO DENSITY-FUNCTIONAL APPROXIMATIONS FOR MANY-ELECTRON SYSTEMS
    PERDEW, JP
    ZUNGER, A
    [J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5048 - 5079